The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2021

Filed:

Feb. 20, 2019
Applicant:

Industry-university Cooperation Foundation Hanyang University, Seoul, KR;

Inventor:

Hyeongtag Jeon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/54 (2006.01); C23C 16/458 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45551 (2013.01); C23C 16/44 (2013.01); C23C 16/455 (2013.01); C23C 16/4583 (2013.01); C23C 16/54 (2013.01);
Abstract

An atomic layer deposition apparatus is provided. The apparatus includes a gas supply module for simultaneously providing atomic layer deposition gases including a source gas, a purge gas and a reaction gas on different regions of deposition target substrate, and a stage disposed on a side of the gas supply module and configured to move the deposition target substrate in a linear direction. At least 2 layers of the atomic layer are deposited on the deposition target substrate as moving the deposition target substrate in the linear direction along the stage at 1-cycle.


Find Patent Forward Citations

Jeon, Hyeongtag. (2021). Atomic layer deposition apparatus and atomic layer deposition method using the same (U.S. Patent No. 11124875). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11124875

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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