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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11124870 B1

PDFFull Text
Date of Patent:
Sep. 21, 2021

Filed:

May. 31, 2018

Transfer-free method for producing graphene thin film

Applicant:

Withustech Co., Ltd., Daejeon, KR;

Inventors:

Soon-Gil Yoon, Daejeon, KR;

Byeong-Ju Park, Daejeon, KR;

Assignee:

KUK-IL GRAPHENE CO., LTD., Seoul, KR;

Attorneys:

Mintz, Levin, Cohn, Ferris, Glovsky and Pope, P.C.

Joohee Lee

Primary Examiner:

John J Brayton

Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 14/34 (2006.01); C23C 16/50 (2006.01); C23C 14/04 (2006.01); C23C 14/18 (2006.01); C23C 14/20 (2006.01); H01G 4/33 (2006.01); H01G 4/008 (2006.01); H01B 1/04 (2006.01); H01B 13/00 (2006.01); C23C 16/04 (2006.01); C23C 16/505 (2006.01); H01G 4/08 (2006.01); H05K 1/16 (2006.01); H01G 4/12 (2006.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C23C 14/042 (2013.01); C23C 14/185 (2013.01); C23C 14/205 (2013.01); C23C 14/34 (2013.01); C23C 16/042 (2013.01); C23C 16/50 (2013.01); C23C 16/505 (2013.01); H01B 1/04 (2013.01); H01B 13/0036 (2013.01); H01G 4/008 (2013.01); H01G 4/085 (2013.01); H01G 4/33 (2013.01); H05K 1/162 (2013.01); H01G 4/1254 (2013.01);
Abstract

The present invention relates to a transfer-free method for producing a graphene thin film, which may form a high-quality graphene layer having excellent crystallinity on a substrate without a transfer process, and to a method of fabricating a device using the transfer-free method. More specifically, the present invention relates to a transfer-free method for producing a graphene thin film and a method for fabricating a device using the transfer-free method, the methods including the steps of: (A) forming a titanium buffer layer on a target substrate; and (B) growing a graphene thin film on the titanium buffer layer, wherein process are performed in an oxygen-free atmosphere throughout the steps (A) to (B).

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