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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11121523 B1

PDFFull Text
Date of Patent:
Sep. 14, 2021

Filed:

Oct. 08, 2019

Semiconductor devices with depleted heterojunction current blocking regions

Applicant:

University of Central Florida Research Foundation, Inc., Orlando, FL (US);

Inventor:

Dennis G. Deppe, Oviedo, FL (US);

Assignee:

University of Central Florida Research Foundation, Inc., Orlando, FL (US);

Attorneys:

Fleit Intellectual Property Law

Thomas S. Grzesik

Primary Examiner:

Anthony Ho

Assistant Examiner:

Kevin Quinto

Int. Cl.
CPC ...
H01S 5/183 (2006.01); H01L 33/14 (2010.01); H01S 5/20 (2006.01); H01L 21/04 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01);
U.S. Cl.
CPC ...
H01S 5/18308 (2013.01); H01L 21/046 (2013.01); H01L 29/0619 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/7395 (2013.01); H01L 29/7828 (2013.01); H01L 29/8083 (2013.01); H01L 33/145 (2013.01); H01S 5/2063 (2013.01); H01S 5/18358 (2013.01);
Abstract

A semiconductor heterostructure device includes a middle layer including an inner conducting channel and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) is within the outer current blocking region. The DHCBR includes a first depleting impurity specie including a Column II acceptor, and a second depleting impurity comprising oxygen which increases a depletion of the DHCBR so that the DHCBR forces current to flow into the conducting channel during electrical biasing under normal operation of the semiconductor heterostructure device.

Find Patent Forward Citations

Deppe, Dennis. (2021). Semiconductor devices with depleted heterojunction current blocking regions (U.S. Patent No. 11121523). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11121523

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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