The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Dec. 04, 2019
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Anis Daami, Grenoble, FR;
Marianne Consonni, Grenoble, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/58 (2010.01); H01L 33/00 (2010.01); H01L 33/30 (2010.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/58 (2013.01); H01L 33/0062 (2013.01); H01L 33/0095 (2013.01); H01L 33/30 (2013.01); H01L 33/54 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0058 (2013.01);
Abstract
A method of adapting light extraction LEE from at least one light emitting diode with surface area S and perimeter P includes a step to encapsulate the light emitting diode with an encapsulation layer with a refraction index N, the refraction index N being determined based on a model taking account of an internal quantum efficiency of the light emitting diode. The extraction of light resulting from use of the encapsulation layer is such that the light emitting diode can achieve a predetermined external quantum efficiency.