The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Dec. 21, 2017
Suzhou Lektn Semiconductor Co., Ltd., Taicang, CN;
Jae Won Seo, Seoul, KR;
SUZHOU LEKTN SEMICONDUCTOR CO., LTD., Taicang, CN;
Abstract
A semiconductor device according to an embodiment includes a substrate, first and second light emitting structures disposed on the substrate, a first reflective electrode disposed on the first light emitting structure, a second reflective electrode disposed on the second light emitting structure, a connection electrode, a first electrode pad, and a second electrode pad. According to the embodiment, the first light emitting structure includes a first semiconductor layer of a first conductivity type, a first active layer disposed on the first semiconductor layer, a second semiconductor layer of a second conductivity type and disposed on the first active layer, and a first through hole provided through the second semiconductor layer and the first active layer to expose the first semiconductor layer. The second light emitting structure is spaced apart from the first light emitting structure and includes a third semiconductor layer of the first conductivity type, a second active layer disposed on the third semiconductor layer, and a fourth semiconductor layer of the second conductivity type and disposed on the second active layer.