The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Oct. 20, 2017
Applicant:

Suzhou Lekin Semiconductor Co., Ltd., Taicang, CN;

Inventors:

Ki Man Kang, Seoul, KR;

Eun Dk Lee, Seoul, KR;

Hyun Soo Lim, Seoul, KR;

Youn Joon Sung, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/24 (2013.01); H01L 33/305 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/46 (2013.01);
Abstract

Disclosed in an embodiment is a semiconductor device comprising: a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a reflective layer disposed on the second electrode and including a first metal; and a nitride of the first metal between the second electrode and the reflective layer.


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