The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Apr. 09, 2020
Applicant:

Lumentum Japan, Inc., Kanagawa, JP;

Inventors:

Ryu Washino, Kanagawa, JP;

Hiroshi Hamada, Kanagawa, JP;

Takafumi Taniguchi, Tokyo, JP;

Assignee:

Lumentum Japan, Inc., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/022408 (2013.01); H01L 31/035281 (2013.01); H01L 31/18 (2013.01);
Abstract

A semiconductor light-receiving element includes a substrate; a light-receiving mesa portion, formed on top of the substrate, including a first semiconductor layer of a first conductivity type, an absorption layer, and a second semiconductor layer of a second conductivity type; a light-receiving portion electrode, formed above the light-receiving mesa portion, connected to the first semiconductor layer; a pad electrode formed on top of the substrate; and a bridge electrode, placed so that an insulating gap is interposed between the bridge electrode and the second semiconductor layer, configured to connect the light-receiving portion electrode and the pad electrode on top of the substrate, the bridge electrode being formed in a layer separate from layers of the light-receiving portion electrode and the pad electrode.


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