The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Oct. 17, 2019
Korea Electrotechnology Research Institute, Changwon-si, KR;
O Gyun Seok, Busan, KR;
In Ho Kang, Jinju-Si, KR;
Sang Cheol Kim, Changwon-si, KR;
Hyoung Woo Kim, Changwon-si, KR;
Moon Kyong Na, Changwon-si, KR;
Jeong Hyun Moon, Gimhae-si, KR;
Wook Bang, Changwon-si, KR;
Abstract
The present invention relates to a silicon carbide trench Schottky barrier diode using polysilicon and a method of manufacturing same. The diode has a low turn-on voltage and an improved reverse characteristic. The method includes sequentially forming an epitaxial layer, a polysilicon layer, an oxide film, and a photoresist film on a silicon carbide substrate, patterning the photoresist to form a photoresist pattern, etching the oxide film using the photoresist pattern as an etching mask to form an oxide film pattern, etching the polysilicon layer using the oxide film pattern as an etching mask to form a polysilicon pattern, removing the photoresist pattern, forming an epitaxial pattern by etching the epitaxial layer down to a predetermined depth using the oxide film pattern as an etching mask, and removing the oxide film pattern to produce a trench.