The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 17, 2020
Applicant:
Apple Inc., Cupertino, CA (US);
Inventors:
Jehun Lee, Seoul, KR;
Ching-Sang Chuang, Sunnyvale, CA (US);
Hirokazu Yamagata, Yokohama, JP;
Jiun-Jye Chang, Hsinchu, TW;
Kenny Kim, San Jose, CA (US);
Po-Chun Yeh, Cupertino, CA (US);
Shih Chang Chang, Cupertino, CA (US);
Ting-Kuo Chang, San Jose, CA (US);
Assignee:
Apple Inc., Cupertino, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 27/1248 (2013.01); H01L 27/1251 (2013.01); H01L 29/7869 (2013.01); H01L 29/78651 (2013.01);
Abstract
Display panels with hydrogen trap layers are described. The hydrogen trap layers may be incorporated into a variety of locations to getter or block hydrogen diffusion into the semiconductor oxide layer of an oxide transistor.