The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Feb. 19, 2018
Mitsubishi Electric Corporation, Tokyo, JP;
Takaaki Tominaga, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
In an element region and a non-element region, a silicon carbide semiconductor device includes a drift layer having a first conductivity type provided on a silicon carbide semiconductor substrate. In the element region, the silicon carbide semiconductor device includes a first trench that reaches the drift layer, and a gate electrode provided in the first trench through a gate insulation film and electrically connected to a gate pad electrode. In the non-element region, the silicon carbide semiconductor device includes a second trench whose bottom surface reaches the drift layer, a second relaxation region having a second conductivity type disposed below the second trench, an inner-surface insulation film provided on a side surface and on the bottom surface of the second trench, and a low-resistance region provided in the second trench through the inner-surface insulation film and electrically insulated from the gate pad electrode.