The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11121240 B1

Date of Patent:

Sep. 14, 2021

Filed:

Feb. 26, 2019

Semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Kunio Kobayashi, Azumino, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:

Primary Examiner:

Walter H Swanson

Int. Cl.

CPC ...

H01L 29/739 (2006.01); H01L 49/02 (2006.01); H01L 29/78 (2006.01);

U.S. Cl.

CPC ...

H01L 29/7393 (2013.01); H01L 28/20 (2013.01); H01L 29/782 (2013.01); H01L 29/7819 (2013.01);

Abstract

In a semiconductor device using, as a FWD, a diode formed in a silicon carbide (SiC) substrate, while preventing gate oscillation, an increase of switching loss is suppressed at the time of a temperature increase also. A semiconductor device includes: a transistor element; a diode element formed in a SiC substrate; and a resistive element that is electrically connected to a gate of the transistor element, and has a resistor temperature coefficient which is within the range of ±150×10/K. The resistive element has a resistor formed of a ceramic-containing material.

Find Patent Forward Citations

Kobayashi, Kunio. (2021). Semiconductor device (U.S. Patent No. 11121240). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11121240

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