The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Aug. 02, 2018
Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Guangdong, CN;
Huafei Xie, Guangdong, CN;
Abstract
Disclosed is a manufacturing method of a thin film transistor, comprising: sequentially preparing a gate, a gate insulation layer and an active layer on the substrate; preparing an etching stopper layer on the active layer; depositing an ohmic contact layer film on the etching stopper layer and the active layer, and depositing a source drain conductive film on the ohmic contact layer film; processing the source drain conductive film to form a source and a drain, which are patterned, and processing the ohmic contact layer film by a dry etching process to form an ohmic contact layer, which is patterned; removing the etching stopper layer after preparing the ohmic contact layer. Since the etching stopper layer is disposed above the channel of the transistor before preparing the ohmic contact layer, the damage to the active layer by dry etching can be effectively avoided to improve the performance of the transistor.