The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Oct. 15, 2019
Canon Kabushiki Kaisha, Tokyo, JP;
Sho Suzuki, Machida, JP;
Takehito Okabe, Yokohama, JP;
Mitsuhiro Yomori, Tama, JP;
Takuya Hara, Yokohama, JP;
Keita Torii, Naka-gun, JP;
Yukinobu Suzuki, Koza-gun, JP;
Tomoyuki Tezuka, Sagamihara, JP;
Norihiko Nakata, Hiratsuka, JP;
Daichi Seto, Yokohama, JP;
Kenji Togo, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
Photoelectric conversion apparatus includes semiconductor layer having photoelectric converters in light-receiving region and photoelectric converters in light-shielded region, light-shielding part arranged above the semiconductor layer in the light-receiving region to surround light paths of the photoelectric converters in the light-receiving region, and light-shielding film arranged above the semiconductor layer in the light-shielded region to cover the photoelectric converters in the light-shielded region. The light-shielding part includes lower and upper ends. The light-shielding film includes lower and upper surfaces. Distance between the upper end and the semiconductor layer is larger than that between the upper surface and the semiconductor layer. Distance between the lower end and the semiconductor layer is smaller than that between the upper surface and the semiconductor layer and is larger than that between the lower surface and the semiconductor layer.