The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Nov. 16, 2017
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventor:
Martin M. Frank, Dobbs Ferry, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11507 (2017.01); H01L 49/02 (2006.01); H01L 21/285 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02181 (2013.01); H01L 21/02189 (2013.01); H01L 21/02194 (2013.01); H01L 21/02282 (2013.01); H01L 21/28568 (2013.01); H01L 28/55 (2013.01); H01L 28/60 (2013.01); H01L 29/78 (2013.01); H01L 29/785 (2013.01); H01L 29/7827 (2013.01);
Abstract
A method of forming a ferroelectric/anti-ferroelectric (FE/AFE) dielectric layer is provided. The method includes forming a metal electrode layer on a substrate, wherein the metal electrode layer has an exposed surface with at least 80% {111} crystal face, and forming an FE/AFE dielectric layer on the exposed surface of the metal electrode layer, wherein the FE/AFE dielectric layer is a group 4 transition metal oxide.