The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 29, 2020
Infineon Technologies Ag, Neubiberg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
An embodiment of a silicon controlled rectifier (SCR) includes a semiconductor body, an active device region, and a device isolation region configured to electrically insulate the active device region from neighboring active device regions. First SCR regions and a second SCR region of a first conductivity type are in the active device region. A first pn-junction or Schottky junction is formed at an interface between the first SCR regions and the second SCR region. A first plurality of the first SCR regions and sub-regions of the second SCR region are alternately arranged and directly adjoin one another. A second pn-junction is formed at an interface between the second SCR region and a third SCR region of a second conductivity type. A third pn-junction is formed at an interface between the third SCR region and a fourth SCR region of the first conductivity type.