The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Mar. 24, 2017
Mitsubishi Electric Corporation, Tokyo, JP;
Daisuke Tsunami, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
There is provided a method of manufacturing a semiconductor device that is suitable for forming a one-step tapered groove even when a substrate material is a difficult-to-etch material. The method of manufacturing a semiconductor device includes a metal mask forming step, a dry etching step, and a metal mask removing step. The metal mask formation step forms a tapered metal mask having an opening on the back surface of the substrate. The opening exposes a part in the back surface, and an edge portion of the opening has a forward taper to the back surface. The dry etching step forms a tapered groove on the substrate by performing, from an upper side of the tapered metal mask, dry etching on the edge portion of the opening and the substrate exposed from the opening. The metal mask removing step removes the tapered metal mask.