The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 08, 2019
Applicant:
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Inventors:
Jeffrey Peter Gambino, Gresham, OR (US);
Bruce Greenwood, Gresham, OR (US);
Angel Rodriguez, San Jose, CA (US);
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/008 (2006.01); H01G 4/10 (2006.01); H01L 27/146 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01G 4/008 (2013.01); H01G 4/10 (2013.01); H01L 27/14634 (2013.01); H01L 28/91 (2013.01); H01L 27/14609 (2013.01); H01L 28/60 (2013.01);
Abstract
Implementations of methods of forming capacitors may include depositing a first metal layer over a substrate, forming a photoresist layer over the first metal layer, patterning the photoresist layer, patterning the first metal layer using the pattern of the photoresist layer, depositing a dielectric layer over the first metal layer, and depositing a second metal layer over the dielectric layer to form a metal-insulator-metal capacitor.