The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Sep. 08, 2016
Applicant:

Hoya Corporation, Tokyo, JP;

Inventors:

Atsushi Matsumoto, Tokyo, JP;

Hiroaki Shishido, Tokyo, JP;

Takashi Uchida, Tokyo, JP;

Assignee:

HOYA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/32 (2012.01); G03F 1/58 (2012.01); G03F 1/38 (2012.01); G03F 1/48 (2012.01); G03F 1/20 (2012.01); G03F 1/42 (2012.01); G03F 1/80 (2012.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
G03F 1/32 (2013.01); G03F 1/20 (2013.01); G03F 1/38 (2013.01); G03F 1/42 (2013.01); G03F 1/48 (2013.01); G03F 1/58 (2013.01); G03F 1/80 (2013.01); H01L 21/0337 (2013.01);
Abstract

According to the present invention, provided is a mask blank (), in which: a light shielding film () has a single layer structure or a laminate structure of a plurality of layers; at least one layer of the light shielding film () is formed of a material which contains a transition metal and silicon and is free from nitrogen and oxygen, or a material which contains a transition metal, silicon, and nitrogen and satisfies a condition of the following expression (1); a phase shift film () has a surface layer and a layer other than the surface layer; and the layer other than the surface layer is formed of a material which contains a transition metal, silicon, nitrogen, and oxygen, has a content of oxygen of 3 atom % or more, and satisfies a condition of the following expression (A).≤9.0×10−1.65×10−7.718×103.611−21.084   Expression (1)0.04−0.06>1  Expression (A)


Find Patent Forward Citations

Matsumoto, Atsushi. (2021). Mask blank, phase shift mask and method for manufacturing semiconductor device (U.S. Patent No. 11119399). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11119399

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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