The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jun. 01, 2018
Applicant:
Kyocera Corporation, Kyoto, JP;
Inventor:
Akihiko Suzuki, Tokyo, JP;
Assignee:
KYOCERA CORPORATION, Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 13/14 (2006.01); G02B 13/18 (2006.01); H01L 31/0232 (2014.01); G02B 5/18 (2006.01);
U.S. Cl.
CPC ...
G02B 13/146 (2013.01); G02B 5/1814 (2013.01); G02B 13/14 (2013.01); G02B 13/18 (2013.01); H01L 31/02325 (2013.01);
Abstract
An infrared imaging lens system comprises, in order from an object side, a first lens formed of silicon whose minimum transmittance of infrared rays with a wavelength of 8 μm to 13 μm is at least 40% for a thickness of 1 mm, and a second lens formed of chalcogenide glass. The silicon whose minimum transmittance of infrared rays with a wavelength of 8 μm to 13 μm is at least 40% for a thickness of 1 mm can be obtained at low cost for example by controlling the oxygen concentration in CZ method.