The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 08, 2020
Texas Instruments Incorporated, Dallas, TX (US);
Thomas Edward Lillibridge, Plano, TX (US);
Neil L Gardner, Lowry Crossing, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A microelectronic device includes a deep trench test structure in semiconductor material of a substrate. The deep trench test structure has pad trench segments with a liner of electrically non-conductive material and a trench fill material on the liner, extending to tops of the pad trench segments. The pad trench segments extend across a probe pad region; at least 20 microns in every lateral direction. The trench fill material at the top of the pad trench segments occupies at least 25 percent of the probe pad region. The liner may electrically isolate the trench fill material from the semiconductor material, or the deep trench test structure may include a contact trench segment wherein the trench fill material contacts the semiconductor material. The deep trench test structure may be probed on the pad trench segments to measure an impedance between the trench fill material and the semiconductor material.