The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Oct. 11, 2018
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Naoto Tsuji, Tokyo, JP;

Masaki Hirayama, Miyagi, JP;

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); B01F 5/02 (2006.01); H01J 37/32 (2006.01); B01F 3/02 (2006.01); C23C 16/50 (2006.01); B01F 5/00 (2006.01); B01F 15/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45512 (2013.01); B01F 3/02 (2013.01); B01F 5/0057 (2013.01); B01F 5/0256 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/45561 (2013.01); C23C 16/45565 (2013.01); C23C 16/50 (2013.01); H01J 37/3244 (2013.01); B01F 15/00915 (2013.01);
Abstract

A substrate processing apparatus includes a chamber, a manifold including a tubular portion above the chamber, first and second introduction pipes provided on a side surface of the tubular portion, and a gas guide portion to guide, in a direction opposite the chamber, gases introduced from the first and second introduction pipes into the tubular portion, and then introduce the gases into the chamber. The gas guide portion does not contact a top of the manifold, and the manifold includes a space above the gas guide portion to allow the gases to flow from between the gas guide portion and the tubular portion into a space surrounded by the gas guide portion. The gas guide portion advantageously enables the gases to broadly diffuse and uniformly mix, increasing the quality of a film formed on a substrate inside the chamber.


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