The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 14, 2021

Filed:

Sep. 13, 2016
Applicants:

Furukawa Electric Co., Ltd., Tokyo, JP;

Furukawa Techno Material Co., Ltd., Hiratsuka, JP;

Tohoku University, Sendai, JP;

Inventors:

Misato Fujii, Hiratsuka, JP;

Sumio Kise, Hiratsuka, JP;

Toyonobu Tanaka, Hiratsuka, JP;

Kenji Nakamizo, Hiratsuka, JP;

Koji Ishikawa, Hiratsuka, JP;

Toshihiro Omori, Sendai, JP;

Ryosuke Kainuma, Sendai, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22F 1/08 (2006.01); C22C 9/01 (2006.01); C22C 9/05 (2006.01); B22D 21/00 (2006.01); C22C 1/02 (2006.01);
U.S. Cl.
CPC ...
C22F 1/08 (2013.01); B22D 21/005 (2013.01); C22C 1/02 (2013.01); C22C 9/01 (2013.01); C22C 9/05 (2013.01);
Abstract

A Cu—Al—Mn-based alloy material () having a composition comprising: given contents of Al and Mn, and a given total content of at least one selected from Ni and the like; with the balance being Cu and unavoidable impurities, wherein the alloy material has a shape elongated in the working direction (RD), wherein a grain length ain the RD is R/2 or less to the width or diameter (R), a grain length bin a direction perpendicular to the RD is R/4 or less, and the amount of grains X () is 15% or less, and wherein a grain length a in the RD and a grain length b in the direction perpendicular to the RD satisfy: a≥b, and an angle formed by the normal line of the (111) plane and the RD is 15° or larger, the amount of grains Y' () is 85% or more.


Find Patent Forward Citations

Loading…