The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Nov. 18, 2019
Interface Technology (Chengdu) Co., Ltd., Chengdu, CN;
Interface Optoelectronics (Shenzhen) Co., Ltd., Shenzhen, CN;
General Interface Solution Limited, Miaoli County, TW;
Hung-Chieh Chin, Shenzhen, CN;
Po-Lin Chen, Shenzhen, CN;
Hung Chien Lee, Shenzhen, CN;
Feng Ju Li, Shenzhen, CN;
Dong-Sheng Xie, Shenzhen, CN;
Gang Wu, Shenzhen, CN;
Interface Technology (Chengdu) Co., Ltd., Chengdu, CN;
Interface Optoelectronics (Shenzhen) Co., Ltd., Shenzhen, CN;
General Interface Solution Limited, Miaoli County, TW;
Abstract
An improved insulation protection structure comprises a sensor film, a chip outline, a protective film, and an insulating cement layer. The chip outline is on the sensor film, the protective film is on the chip outline, the insulating cement layer is between the chip outline and the protective film. The insulating cement layer comprises at least one surface facing inward the chip outline, retracted toward the direction of the chip outline and forms a retracted region along at least one side of the sensor film. Area of the proposed retracted region is preferably no more than 20% of that of the total insulating cement layer, and the conventional issues such as sulphide corrosion are solved. The proposed insulating cement layer can be cured merely at room temperature, and widely used for adhesive materials including both a gel and film, thus characterized by wider application range and better industrial applicability.