The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Apr. 16, 2020
Applicant:

Db Hitek Co., Ltd., Seoul, KR;

Inventors:

Hyeok In Kwon, Gyeonggi-do, KR;

Jong Won Sun, Gyeonggi-do, KR;

Assignee:

DB HITEK CO., LTD., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04R 19/00 (2006.01); H04R 19/04 (2006.01); B81B 7/00 (2006.01); B81C 1/00 (2006.01); H04R 31/00 (2006.01);
U.S. Cl.
CPC ...
H04R 19/04 (2013.01); B81B 7/0061 (2013.01); B81C 1/00309 (2013.01); H04R 31/003 (2013.01); B81B 2201/0257 (2013.01); B81B 2203/0127 (2013.01); B81B 2203/0315 (2013.01); B81B 2203/04 (2013.01); B81C 2201/013 (2013.01); H04R 2201/003 (2013.01);
Abstract

A MEMS microphone includes a first dummy pad elevating a circumferential portion of an intermediate insulation layer adjacent to a second pad electrode, a second dummy pad elevating a first circumferential portion of an upper insulation layer adjacent to the second pad electrode, and a third dummy pad elevating a second circumferential portion of the upper insulation layer adjacent to the first pad electrode. Thus the first circumferential portion of the upper insulation layer is elevated relative to an upper surface of the second pad electrode, and the second circumferential portion of the upper insulation layer is elevated relative to an upper surface of the first pad electrode.


Find Patent Forward Citations

Loading…