The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Feb. 13, 2020
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
According to one embodiment, an optical semiconductor element includes a substrate, a light emitting layer, and a distributed Bragg reflector. The light emitting layer includes an AlGaAs multi quantum well layer. The distributed Bragg reflector is provided between the substrate and the light emitting layer. A pair of a first layer and a second layer is periodically stacked in the distributed Bragg reflector. The first layer includes AlGaAs. The second layer includes In(AlGa)P. A refractive index nof the first layer is higher than a refractive index nof the second layer. The first layer has a thickness larger than λ0/(4n) where λ0 is a center wavelength of a band on wavelength distribution of a reflectivity of the distributed Bragg reflector. The second layer has a thickness smaller than λ0/(4n).