The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Jul. 23, 2019
Applicant:

Everspin Technologies, Inc., Chandler, AZ (US);

Inventors:

Jijun Sun, Chandler, AZ (US);

Shimon, Singapore, SG;

Han-Jong Chia, Hsinchu, TW;

Assignee:

Everspin Technologies Inc., Chandler, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 43/04 (2006.01); G11C 11/16 (2006.01); H01L 27/22 (2006.01); H01L 43/06 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
H01L 43/04 (2013.01); G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/065 (2013.01); H01L 43/14 (2013.01);
Abstract

Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SH material injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from SH material can be used to switch the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional regions or manufacturing steps may improve the switching efficiency and the thermal stability of magnetoresistive devices.


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