The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Apr. 07, 2020
Applicant:

Microsoft Technology Licensing, Llc, Redmond, WA (US);

Inventors:

Richard P. Rouse, Bellevue, WA (US);

David B. Tuckerman, Lafayette, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01); H01L 39/12 (2006.01); H01L 39/02 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 21/48 (2006.01); H05K 3/46 (2006.01); B82Y 10/00 (2011.01); B05D 1/00 (2006.01); B05D 5/12 (2006.01); B05D 7/00 (2006.01); B82Y 40/00 (2011.01);
U.S. Cl.
CPC ...
H01L 39/2467 (2013.01); H01L 21/76828 (2013.01); H01L 21/76891 (2013.01); H01L 23/49888 (2013.01); H01L 23/53285 (2013.01); H01L 39/025 (2013.01); H01L 39/128 (2013.01); H01L 39/2406 (2013.01); H01L 39/2487 (2013.01); B05D 1/005 (2013.01); B05D 5/12 (2013.01); B05D 7/50 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/4857 (2013.01); H01L 23/49822 (2013.01); H01L 39/2493 (2013.01); H05K 3/4605 (2013.01); H05K 3/467 (2013.01); H05K 2201/10378 (2013.01);
Abstract

Methods and structures corresponding to superconducting apparatus including superconducting layers and traces are provided. A method for forming a superconducting apparatus includes forming a first dielectric layer on a substrate by depositing a first dielectric material on the substrate and curing the first dielectric material at a first temperature. The method further includes forming a first superconducting layer comprising a first set of patterned superconducting traces on the first dielectric layer. The method further includes forming a second dielectric layer on the first superconducting layer by depositing a second dielectric material on the first superconducting layer and curing the second dielectric material at a second temperature, where the second temperature is lower than the first temperature. The method further includes forming a second superconducting layer comprising a second set of patterned superconducting traces on the second dielectric layer.


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