The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Feb. 07, 2018
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Kengo Moriyasu, Tokyo, JP;
Ushio Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor light emitting element according to the present invention is obtained by forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate. The semiconductor light emitting element includes a first insulating layer, a first electrode, and a second electrode. The first insulating layer is formed in a position closer to the substrate than the first semiconductor layer in a first direction orthogonal to a surface of the substrate and is formed so as to protrude outward from a first surface being a surface on a side of the substrate of the first semiconductor layer as seen in the first direction. A first region where the first surface and the first insulating layer face each other and a second region where the first surface and the first electrode face each other are spaced apart in a direction parallel to the surface of the substrate.