The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Dec. 10, 2019
Applicants:
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Inventor:
Hideto Sugawara, Nonoichi, JP;
Assignees:
KABUSHIKI KAISHA TOSHIBA, Minato, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/30 (2013.01);
Abstract
According to one embodiment, a semiconductor light emitting device includes a substrate, and a multi quantum well layer provided on the substrate, and including a plurality of barrier layers sandwiched between three or more InGaAs well layers and two InGaAs well layers. The barrier layers include at least two regions having different mixed crystal ratios or at least two regions having different thicknesses.