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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11114567 B1

PDFFull Text
Date of Patent:
Sep. 07, 2021

Filed:

Feb. 19, 2019

Manufacturing method of tft substrate and tft substrate

Applicant:

Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, CN;

Inventors:

Zhichao Zhou, Shenzhen, CN;

Hui Xia, Shenzhen, CN;

Assignee:

SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Shenzhen, CN;

Attorney:

Leong C. Lei

Primary Examiner:

Hsin Yi Hsieh

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/443 (2006.01); H01L 21/467 (2006.01); H01L 21/4757 (2006.01); H01L 21/4763 (2006.01); H01L 23/31 (2006.01); H01L 27/12 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78642 (2013.01); H01L 21/0274 (2013.01); H01L 21/02271 (2013.01); H01L 21/28158 (2013.01); H01L 21/28568 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32134 (2013.01); H01L 21/32139 (2013.01); H01L 21/443 (2013.01); H01L 21/467 (2013.01); H01L 21/47573 (2013.01); H01L 21/47635 (2013.01); H01L 23/3171 (2013.01); H01L 27/124 (2013.01); H01L 27/127 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1262 (2013.01); H01L 27/1288 (2013.01); H01L 29/4908 (2013.01); H01L 29/6675 (2013.01); H01L 29/66742 (2013.01); H01L 29/66969 (2013.01); H01L 29/78648 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01);
Abstract

A manufacturing method of TFT substrate and a TFT substrate are provided. The method provides a dual-gate structure symmetrically disposed on both sides of active layer, which prevents TFT threshold voltage from changing and improve TFT conduction state switching; by first manufacturing the active layer before the gate insulating layer to make the insulating layer directly grow on active layer, the contact interface between the gate insulating layer and active layer is improved, leading to further improving TFT conduction state switching. The TFT substrate makes the gate located between the source and the pixel electrode in vertical direction, and the dual-gate is symmetrically disposed on both sides of active layer to prevent TFT threshold voltage from changing and improve TFT conduction state switching, as well as improve the contact interface between the gate insulating layer and active layer, leading to further improving TFT conduction state switching.

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