The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
May. 18, 2012
Applicants:
Chanho Park, Pleasanton, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Inventors:
Chanho Park, Pleasanton, CA (US);
Kyle Terrill, Santa Clara, CA (US);
Assignee:
Vishay-Siliconix, LLC, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/407 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/41766 (2013.01); H01L 29/4238 (2013.01);
Abstract
A semiconductor device includes a first group of trench-like structures and a second group of trench-like structures. Each trench-like structure in the first group includes a gate electrode contacted to gate metal and a source electrode contacted to source metal. Each of the trench-like structures in the second group is disabled. The second group of disabled trench-like structures is interleaved with the first group of trench-like structures.