The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Jan. 21, 2020
Imec Vzw, Leuven, BE;
IMEC VZW, Leuven, BE;
Abstract
Example embodiments relate to enhancement-mode high electron mobility transistors. One embodiment includes a method for manufacturing an enhancement-mode high electron mobility transistor. The method includes providing a stack of layers. The stack of layers includes a substrate, a III-V channel layer over the substrate, a III-V barrier layer on the channel layer, a p-doped III-V layer on the III-V barrier layer, and a Schottky contact interlayer on the p-doped III-V layer. The p-doped III-V layer has a first surface area. The Schottky contact interlayer has a second surface area. The second surface area is less than the first surface area. The second surface area leaves a peripheral part of a top surface of the p-doped III-V layer uncovered. The method also includes depositing a metal gate on the Schottky contact interlayer.