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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11114535 B1

PDFFull Text
Date of Patent:
Sep. 07, 2021

Filed:

Oct. 05, 2018

Integrated circuit devices and methods of manufacturing the same

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hak-yoon Ahn, Seoul, KR;

Sang-hyun Lee, Hwaseong-si, KR;

Sung-woo Kang, Suwon-si, KR;

Hong-sik Shin, Seoul, KR;

Seong-han Oh, Namyangju-si, KR;

Young-mook Oh, Hwaseong-si, KR;

In-keun Lee, Hwaseong-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;

Attorney:

Muir Patent Law, PLLC

Primary Examiner:

Khaja Ahmad

Assistant Examiner:

Pavel G Ivanov

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 21/033 (2006.01); H01L 27/088 (2006.01); H01L 29/165 (2006.01); H01L 29/45 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41791 (2013.01); H01L 21/823475 (2013.01); H01L 29/7851 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/45 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/7853 (2013.01); H01L 2029/7858 (2013.01);
Abstract

A semiconductor device may include a substrate including a fin active region extending in a first direction, a gate structure crossing the fin active region and extending in a second direction crossing the first direction, source/drain regions on the fin active region at opposite sides of the gate structure, a first contact structure electrically connected to one of the source/drain regions, a pair of first contact block structures on opposite first sidewalls, respectively, of the first contact structure in the second direction.

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