The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Feb. 08, 2018
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Tatsuo Shimizu, Shinagawa, JP;
Masayasu Miyata, Kawasaki, JP;
Hirotaka Nishino, Yokohama, JP;
Yoshihiko Moriyama, Setagaya, JP;
Yuichiro Mitani, Hayama, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
A semiconductor device according to an embodiment includes a first electrode; a second electrode; a gate electrode; an n-type first silicon carbide region positioned between the first electrode and the second electrode and between the gate electrode and the second electrode; a p-type second silicon carbide region positioned between the first electrode and the first silicon carbide region; a third silicon carbide region of metal containing at least one element selected from the group consisting of nickel (Ni), palladium (Pd), and platinum (Pt), positioned between the first electrode and the second silicon carbide region and spaced apart from the first silicon carbide region; and a gate insulating layer positioned between the gate electrode and the second silicon carbide region.