The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Sep. 05, 2019
Applicant:

Samsung Display Co., Ltd., Yongin-Si, KR;

Inventors:

Kyoung Seok Son, Seoul, KR;

Myoung Hwa Kim, Seoul, KR;

Jay Bum Kim, Seoul, KR;

Seung Jun Lee, Suwon-si, KR;

Seung Hun Lee, Seoul, KR;

Jun Hyung Lim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); G09G 3/3258 (2016.01); G09G 3/3291 (2016.01); H01L 51/52 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3279 (2013.01); G09G 3/3258 (2013.01); G09G 3/3291 (2013.01); H01L 27/3258 (2013.01); H01L 51/52 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01);
Abstract

A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.


Find Patent Forward Citations

Loading…