The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Jun. 11, 2018
Shenzhen China Star Optoelectronics Technology Co., Ltd., Guangdong, CN;
Chuanbao Luo, Guangdong, CN;
Jiangbo Yao, Guangdong, CN;
SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Guangdong, CN;
Abstract
A manufacturing method of a TFT array substrate is provided, comprising: depositing and forming a gate and a gate scanning line; depositing sequentially a gate insulating layer, an active layer and a second metal layer; depositing and forming a first photoresist layer and a second photoresist layer on the second metal layer; first photoresist layer comprising a first-stage photoresist layer, second-stage photoresist layer and third-stage photoresist layer with increasing thickness, the first-stage photoresist layer being in the middle of the first photoresist layer and a channel being formed; ashing to remove first-stage photoresist layer, forming a source and a drain by etching; and ashing to remove the second-stage photoresist layer, and then depositing a passivation layer as a whole; stripping third-stage photoresist layer and second photoresist layer, depositing and forming a pixel electrode and a common electrode.