One-time programable memory device having enhanced program efficiency and method for fabricating the same

Abstract

A one-time programmable (OTP) memory device includes a plurality of unit cells which are respectively located at cross points of word lines and bit lines. Each unit cell includes a selection transistor and a storage transistor coupled in series. The selection transistor includes a drain region and a common junction region separated by a first channel region and includes a selection gate structure disposed on the first channel region. The storage transistor includes a source region and the common junction region separated by a second channel region and includes a floating gate structure disposed on the second channel region. A length of an overlapping region between the source region and the floating gate structure in a channel length direction of the storage transistor is less than a length of an overlapping region between the common junction region and the floating gate structure in the channel length direction.