The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Oct. 12, 2018
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Oliver Blank, Villach, AT;
Christof Altstaetter, Villach, AT;
Ingmar Neumann, Villach, AT;
Rudolf Rothmaler, Villach, AT;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01); H01L 29/78 (2006.01); H01L 29/00 (2006.01); H01L 21/78 (2006.01); H01L 23/58 (2006.01); B23K 26/38 (2014.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/544 (2013.01); B23K 26/38 (2013.01); H01L 21/78 (2013.01); H01L 21/7806 (2013.01); H01L 23/5386 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 29/00 (2013.01); H01L 29/7813 (2013.01);
Abstract
A power semiconductor die has a semiconductor body, an insulation layer on the semiconductor body, a passivation structure arranged above the insulation layer so as to expose a first insulation layer subsection that extends to an edge of the power semiconductor die, and an interruption structure in the first insulation layer subsection.