The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Jul. 29, 2019
Applicant:
Corning Incorporated, Corning, NY (US);
Inventors:
Robert Alan Bellman, Ithaca, NY (US);
Shiwen Liu, Painted Post, NY (US);
Assignee:
Corning Incorporated, Corning, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 3/26 (2006.01); B32B 33/00 (2006.01); C03C 15/00 (2006.01); C03C 17/22 (2006.01); C03C 17/30 (2006.01); C03C 23/00 (2006.01); B05D 3/00 (2006.01); B05D 3/06 (2006.01); B05D 3/10 (2006.01); B05D 5/00 (2006.01); H01L 21/48 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); B05D 1/00 (2006.01); H01L 21/683 (2006.01); H01L 23/498 (2006.01); H01L 21/768 (2006.01); B23K 103/00 (2006.01); B23K 26/53 (2014.01); B32B 17/06 (2006.01); C03C 3/04 (2006.01); C23C 16/27 (2006.01);
U.S. Cl.
CPC ...
H01L 21/486 (2013.01); B05D 1/60 (2013.01); B32B 3/26 (2013.01); B32B 33/00 (2013.01); C03C 15/00 (2013.01); C03C 17/22 (2013.01); C03C 17/30 (2013.01); C03C 23/0025 (2013.01); H01L 21/3081 (2013.01); H01L 21/31144 (2013.01); H01L 21/6835 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); B05D 3/007 (2013.01); B05D 3/06 (2013.01); B05D 3/10 (2013.01); B05D 3/107 (2013.01); B05D 2203/30 (2013.01); B05D 2203/35 (2013.01); B23K 26/53 (2015.10); B23K 2103/50 (2018.08); B23K 2103/54 (2018.08); B32B 3/266 (2013.01); B32B 17/06 (2013.01); C03C 3/04 (2013.01); C03C 23/0005 (2013.01); C03C 2204/08 (2013.01); C03C 2218/34 (2013.01); C23C 16/27 (2013.01); H01L 21/76898 (2013.01); Y10T 428/24273 (2015.01); Y10T 428/24322 (2015.01); Y10T 428/31 (2015.01);
Abstract
Methods of forming vias in substrates having at least one damage region extending from a first surface etching the at least one damage region of the substrate to form a via in the substrate, wherein the via extends through the thickness T of the substrate while the first surface of the substrate is masked. The mask is removed from the first surface of the substrate after etching and upon removal of the mask the first surface of the substrate has a surface roughness (Rq) of about less than 1.0 nm.