The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Oct. 22, 2018
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventor:
Yosuke Tanimoto, Tokyo, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 27/11582 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/3065 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
An etching method which includes treating a workpiece having a stacked film () of a silicon oxide layer () and a silicon nitride layer () with an etching gas containing an unsaturated halon represented by the chemical formula: CHFBr (in the chemical formula, x stands for 0, 1, or 2) so as to control the respective etch rates of the silicon nitride layer and the silicon oxide layer to the same level and form a high-aspect-ratio hole having a desirable profile at a high etch rate. Also disclosed is a method of manufacturing a semiconductor which includes by carrying out the etching method.