The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2021
Filed:
Feb. 25, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Bed Prasad Sharma, Gilbert, AZ (US);
Shankar Swaminathan, Phoenix, AZ (US);
YoungChol Byun, Tempe, AZ (US);
Eric James Shero, Phoenix, AZ (US);
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 28/04 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/022 (2013.01); C23C 16/345 (2013.01); C23C 16/36 (2013.01); C23C 16/45536 (2013.01); C23C 28/04 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01); H01L 21/02126 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01);
Abstract
A method for forming a layer comprising SiOC on a substrate is disclosed. An exemplary method includes selectively depositing a layer comprising silicon nitride on the first material relative to the second material and depositing the layer comprising SiOC overlying the layer comprising silicon nitride.