The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

Sep. 02, 2020
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Dong Hyuk Kim, Icheon-si, KR;

Sung Lae Oh, Icheon-si, KR;

Yeong Taek Lee, Icheon-si, KR;

Tae Sung Park, Icheon-si, KR;

Soo Nam Jung, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 5/06 (2006.01); G11C 11/4093 (2006.01); G11C 11/4091 (2006.01); G11C 11/4094 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4093 (2013.01); G11C 5/06 (2013.01); G11C 11/4091 (2013.01); G11C 11/4094 (2013.01);
Abstract

A semiconductor memory device includes a memory cell; and a page buffer including a sensing circuit that is coupled to the memory cell through a bit line. The page buffer includes a first transistor included in the sensing circuit; and a second transistor not included in the sensing circuit. A cross-sectional dimension of a first contact which is coupled to the first transistor and a cross-sectional dimension of a second contact which is coupled to the second transistor are different from each other. The cross-sectional dimension of the second contact is smaller than the cross-sectional dimension of the first contact.


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