The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 07, 2021

Filed:

May. 23, 2019
Applicant:

Sumco Corporation, Tokyo, JP;

Inventor:

Shogo Kobayashi, Tokyo, JP;

Assignee:

SUMCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/35 (2014.01); G01N 21/3563 (2014.01);
U.S. Cl.
CPC ...
G01N 21/3563 (2013.01); G01N 2021/3595 (2013.01);
Abstract

A method for measuring carbon concentration in silicon single crystal according to the present invention includes a step of measuring a carbon concentration of a sample of silicon single crystal using FT-IR, a step of measuring a temperature of the sample during, prior to, or after the measurement of the carbon concentration of the sample, and steps of correcting a measured value Ycs of the carbon concentration of the sample based on the measuring temperature of the sample when the measured Ycs value of the carbon concentration of the sample is at or below 0.5×10atoms/cm.


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