The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Oct. 30, 2018
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventor:

Toshio Nishimura, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/19 (2006.01); H03H 9/10 (2006.01); H03H 9/17 (2006.01); H03H 9/02 (2006.01); B81B 3/00 (2006.01); H03H 9/24 (2006.01); H03H 9/05 (2006.01); H03H 9/13 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H03H 9/02102 (2013.01); B81B 3/00 (2013.01); H03H 9/02 (2013.01); H03H 9/0595 (2013.01); H03H 9/1014 (2013.01); H03H 9/13 (2013.01); H03H 9/176 (2013.01); H03H 9/19 (2013.01); H03H 9/24 (2013.01); H03H 2009/155 (2013.01);
Abstract

A vibrator that includes a silicon substrate, an electrode facing a surface of the silicon substrate, and a piezoelectric body between the silicon substrate and the electrode and that produces contour vibration in a plane along the surface of the silicon substrate in accordance with a voltage applied to the electrode. The vibrator includes one or more substantially rectangular vibration regions each having a long side parallel to a node of the contour vibration of the piezoelectric body and a short side orthogonal to the node of the contour vibration of the piezoelectric body and corresponding to a half-wavelength of the contour vibration. The resonator satisfies W/T≥4 and y=−0.85×(1/T)+0.57±0.05 where T is the thickness of the silicon substrate, W is the width of the short side of the vibration region, and y is the resistivity of the silicon substrate.


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