The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Dec. 20, 2018
Applicants:
Research & Business Foundation Sungkyunkwan University, Suwon-si, KR;
Global Frontier Center for Multiscale Energy Systems, Seoul, KR;
Inventors:
Hyun Suk Jung, Seoul, KR;
Sang Myeong Lee, Suwon-si, KR;
Byeong Jo Kim, Suwon-si, KR;
Jae Bum Jeon, Suwon-si, KR;
Gi Joo Bang, Suwon-si, KR;
Won Bin Kim, Suwon-si, KR;
Dong Geon Lee, Suwon-si, KR;
Assignees:
Research and Business Foundation Sungkyunkwan University, Suwon-si, KR;
Global Frontier Center for Multiscale Energy Systems, Seoul, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01); C07F 19/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/147 (2013.01); G11C 11/5664 (2013.01); G11C 13/0007 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/1608 (2013.01); C07F 19/00 (2013.01);
Abstract
The present disclosure relates to a resistive random access memory device and a preparing method thereof.
Quick Actions:
Jung, Hyun. (2021). Resistive random access memory device comprising metal halide and method for preparing the same (U.S. Patent No. 11107988). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11107988
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile