The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Aug. 26, 2019
Toshiba Memory Corporation, Tokyo, JP;
Hironobu Furuhashi, Kuwana Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes a first conductive layer, a second conductive layer, and a first chalcogen layer provided therebetween. A third conductive layer and a fourth conductive layer have a second chalcogen layer provided therebetween. The second chalcogen layer contains tellurium (Te). When a minimum value and a maximum value of a composition ratio of tellurium in the second chalcogen layer observed along the first direction are a first minimum value and a first maximum value, respectively, the first minimum value is observed at a position closer to the third conductive layer than a center position in the first direction of the second chalcogen layer, and the first maximum value is observed at a position closer to the fourth conductive layer than the center position in the first direction of the second chalcogen layer.