The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Sep. 27, 2019
National Tsing Hua University, Hsinchu, TW;
Hao-Wu Lin, Hsinchu, TW;
Chien-Yu Chen, Hsinchu, TW;
Tse-Wei Chen, Hsinchu, TW;
Li-Wei Chen, Hsinchu, TW;
Wei-Chun Wang, Hsinchu, TW;
Chih-Ting Hsu, Hsinchu, TW;
Abstract
Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.