The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Feb. 13, 2020
Applicant:
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Inventors:
Boris Rodrigues Goncalves, Le Touvet, FR;
Arnaud Tournier, Grenoble, FR;
Assignee:
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 27/146 (2006.01); H01L 31/02 (2006.01); H01L 31/0203 (2014.01);
U.S. Cl.
CPC ...
H01L 31/035281 (2013.01); H01L 31/0203 (2013.01); H01L 31/02005 (2013.01);
Abstract
A photodiode include a first substrate layer of a first dopant type and a second substrate layer of a second dopant type on top of the first substrate layer. Semiconductor walls are provided in a semiconductor substrate which includes the first and second substrate layers. The semiconductor walls include: two outer semiconductor walls and at least one inside semiconductor wall positioned between the two outer semiconductor walls. Each inside semiconductor wall is located between two semiconductor walls having longer length.