The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Mar. 26, 2019
Sharp Kabushiki Kaisha, Sakai, JP;
SHARP KABUSHIKI KAISHA, Sakai, JP;
Abstract
The n-type amorphous semiconductor layersare on parts of that one of the faces of the semiconductor substrate, there being provided no p-type amorphous semiconductor layersin the parts. The electrodesare disposed on the n-type amorphous semiconductor layers. The electrodesare disposed on the p-type amorphous semiconductor layers. The p-type amorphous semiconductor layersbetween those n-type amorphous semiconductor layerswhich are adjacent along an in-plane direction of the semiconductor substrateinclude, arranged along a first direction that points from the n-type amorphous semiconductor layerstoward the adjacent n-type amorphous semiconductor layers: first and second electrode-provided regions where the electrodesare disposed; and a no-electrode-provided region, between the first and second electrode-provided regions, where there are provided no electrodes