The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Feb. 20, 2020
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Toshiba Electronic Devices & Storage Corporation, Minato-ku, JP;
Takuo Kikuchi, Kamakura, JP;
KABUSHIKI KAISHA TOSHIBA, Minato-ku, JP;
TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Minato-ku, JP;
Abstract
A semiconductor device includes a semiconductor part, first and second electrodes on back and front surfaces of the semiconductor part, respectively, a control electrode and a field plate inside a trench on the front surface side. The semiconductor part includes first and third layers of a first conductivity type and a second layer of a second conductivity type. The second layer is provided between the first layer and the second electrode. The third layer is selectively provided between the second layer and the second electrode. The field plate is electrically isolated from the semiconductor part by first and second insulating films. The control electrode is electrically isolated from the semiconductor part by the first insulating film. The second insulating film positioned between the first insulating film and the field plate. The second insulating film has a dielectric constant smaller than a dielectric constant of the first insulating film.